Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON)

Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON) is led by Associate Professor Yury Illarionov (Google Scholar) and belongs to the Department of Materials Science and Engineering (MSE) of the Southern University of Science and Technology (SUSTech), Shenzhen, China.  

Our research is centered around devices based on 2D materials, mainly field-effect transistors and photodetectors. While our laboratory is new, by Fall 2024 we are expected to have facilities for device nanofabrication and electrical characterization. At the moment we are mostly focused on modeling of reliability of field-effect transistors with 2D channels using advanced TCAD tools and compact models.

Our team consists of great people with different professional and cultural backgrounds, each of whom clearly knows and understands their task while being able to work together on the common goals. Thus, our success is determined by the filigree combination of these orchestra-like pillars: Organization, Communication and Interaction which has shaped the slogan of L2DON.

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Research

Two-dimensional (2D) materials offer great opportunities for both nanoscale FETs and other electronic devices which do not require aggressive scaling, such as optoelectronics and sensors. However, all these devices also require suitable gate insulators which would form sharp interfaces with 2D channels, contain low density of defects and allow scalable growth at technologically feasible temperatures.

The group of Prof. Yury Illarionov focuses on finding suitable insulators for different types of 2D devices and work on the following research themes:

– Fabrication of filed-effect transistors, photodetectors and sensors with different 2D channels and new insulators such as fluorides and native oxides

– Advanced characterization of the performance and reliability of these devices in a broad range of temperatures

– Advanced TCAD modeling of device performance and reliability to finally determine which combinations of insulators and 2D channels would enable the most competitive transistors, photodetectors and sensors

– Development of scalable fabrication techniques for the most promising devices, which would also fit technologically feasible thermal budgets (cooperation with industry would be especially valuable for this topic)

Publications

  1.  Knobloch T.$, Uzlu B., Illarionov Yu.Yu.*, Wang Z., Otto M., Filipovic L., Waltl M.,     Neumaier D., Lemme M.*, Grasser T.*, “Optimizing the Stability of FETs Based on         Two-Dimensional Materials by Fermi Level Tuning”, Nature Electronics, 5(6), 356-366 (2022).
  1. Illarionov Yu.Yu.*, Knobloch T.$, Grasser T.*, “Inorganic Molecular Crystals for 2D

         Electronics”, Nature Electronics, 4, 870-871 (2021). [News and Views]

  1.  Illarionov Yu.Yu.*, Knobloch T.$, Grasser T.* “Crystalline Insulators for Scalable 2D

          Nanoelectronics”, Solid-State Electronics, 108043, 185 (2021).

  1. Knobloch T.$*, Illarionov Yu.Yu., Ducry F., Schleich C., Wachter S., Watanabe K., Taniguchi T., Mueller T., Waltl M., Lanza M., Vexler M.I., Luisier M., Grasser T.* “The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials”, Nature Electronics, 4 (2), 98-108 (2021).  $Co-supervised PhD student
  1. Illarionov Yu.Yu.*, Knobloch T., Grasser T.* “Native High-k Oxides for 2D Transistors”, Nature Electronics, 3(8), 442 (2020).  [News and Views]
  1. Illarionov Yu.Yu.*, Knobloch T., Lanza M., Akinwande D., Vexler M.I., Mueller T., Lemme M., Fiori G., Schwierz F., Grasser T.*, “Insulators for 2D Nanoelectronics: the Gap to Bridge”, Nature Communications, 11, 3385 (2020).

           [Featured by Editors, Top 50 Physics articles in 2020]

  1. Illarionov Yu.Yu.*, Banshchikov A.G., Polyushkin D.K., Wachter S., Knobloch T., Thesberg M., Vexler M.I., Waltl M., Lanza M., Sokolov N.S., Mueller T., Grasser T.*, “Reliability of Scalable MoS2 FETs with 2nm Crystalline CaF2 Insulators”, 2D Materials, v.6, p. 045004 (2019).
  2. Illarionov Yu.Yu.*, Banshchikov A.G., Polyushkin D.K., Wachter S., Knobloch T.$, Thesberg M., Stoeger-Pollach M., Steiger-Thirsfeld A., Vexler M.I., Waltl M., Sokolov N.S., Mueller T., Grasser T.*, “Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors”, Nature Electronicsv. 2, pp. 230-235 (2019).
  3. Illarionov Yu.Yu.*, Knobloch T.$, Waltl M., Rzepa G., Pospischil A., Polyushkin D.K., Furchi M.M., Mueller T., Grasser T.*, “Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors”, 2D Materials, v.4, No. 2, 025108 (2017).
  4. Illarionov Yu.Yu.*, Waltl M., Rzepa G., Knobloch T.$, Kim J.-S., Akinwande D., Grasser T., “Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps”, npj 2D Materials and Applications, v.1, 23 (2017).
  5. Illarionov Yu.Yu.*, Smithe K.K.H., Waltl M., Knobloch T.$, Pop E., Grasser T., “Improved Hysteresis and Reliability of MoS2 Transistors with High-Quality CVD Growth and Al2O3 Encapsulation”, IEEE Electron Device Letters, v. 38, No. 12, pp. 1763-1766 (2017).
  6. Illarionov Yu.Yu.*, Waltl M., Rzepa G., Kim J.-S., Kim S., Dodabalapur A., Akinwande D., Grasser T.*, “Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors”, ACS Nano, v. 10, No. 10, pp. 9543–9549 (2016). 
  7. Illarionov Yu.Yu.*, Rzepa G., Waltl M., Knobloch T., Grill A., Furchi M.M., Mueller T., Grasser T.*, “The Role of Charge Trapping in MoS2/SiO2and MoS2/hBN Field-Effect Transistors”, 2D Materials, v. 3, No. 3, 035004 (2016). 
  8. Illarionov Yu.Yu.*, Smith A.D.*, Vaziri S.*, Ostling M.*, Mueller T.*, Lemme M.C.*, Grasser T.*, “Hot Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences”, IEEE Transactions on Electron Devices, v. 62, No. 11, pp. 3876–3881 (2015).
  9. Illarionov Yu.Yu.*, Bina M.*, Tyaginov S.*, Rott K.*, Kaczer B.*, Reisinger H.*, Grasser T.*, “Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs”, IEEE Transactions on Electron Devices, v. 62, No. 9, pp. 2730–2737 (2015).
  10. Illarionov Yu.Yu.*, Vexler M.I., Karner M., Tyaginov S.E., Cervenka J., Grasser T., “TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures”, Current Applied Physics, v. 15, pp. 78-83 (2015).
  11. Illarionov Yu.Yu., Smith A., Vaziri S., Ostling M., Mueller T., Lemme M., Grasser T., “Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors”, Applied Physics Letters, v. 105, No. 14, 143507 (2014).   
  12. Illarionov Yu.Yu.*, Vexler M.I., Fedorov V.V., Suturin S.M., Sokolov N.S., “Electrical and Optical Characterization of Au/CaF2/p-Si(111) Tunnel-Injection Diodes”, Journal of Applied Physics, v. 115, 223706 (2014).
  13. Illarionov Yu.Yu.*, Vexler M.I., Fedorov V.V., Suturin S.M., Sokolov N.S., “Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling through a Thin (1-2 nm) Fluoride Layer”, Thin Solid Films, v. 545, pp. 580-583 (2013).
  14. Illarionov Yu.Yu.*, Vexler M.I., Suturin S.M., Fedorov V.V., Sokolov N.S., Tsutsui K., Takahashi K., “Electron Tunneling in MIS Capacitors with the MBE-Grown Fluoride Layers on Si(111) and Ge(111): Role of Transverse Momentum Conservation”, Microelectronics Engineering (Open special issue “INFOS 2011”), v. 88, No. 7, pp. 1291-1294 (2011).

Team Members

Join us

Postdoctoral and PhD student positions in Southern University of Science and Technology (SUSTech, department of Materials Science and Engineering)
 
Contact: Prof. Yury Illarionov (illarionov@sustech.edu.cn)
 
University info: Southern University of Science and Technology (SUSTech) is a public and dynamic university established in

Contact us

Contact Address

1088 Xueyuan Avenue, Shenzhen 518055, P.R. China

Office Phone

0755-88011173

Email

illarionov@sustech.edu.cn