Experimental Facilities

The experimental facilities of our lab are currently under construction. However, by Fall 2024 we will have all required equipment for scalable fabrication and electrical characterization of various devices with 2D channels such as FETs and photodetectors.

We also have full access to Core Research Facilities of SUSTech (hyperlink to website) on paid basis.

Modeling Software

We have licensed access to advanced TCAD simulator GTS Minimos-NT (hyperlink: https://www.globaltcad.com/products/gts-minimos-nt/). This software integrates a comprehensive set of physical models for simulation of various kinds of advanced device structures, such as contemporary planar and vertical CMOS devices, silicon-on-insulator (SOI) devices, and hetero-structure devices. Taking into account atomistic traps and dopants, GTS Minimos-NT provides reliability and variability modeling of highly scaled transistors, having a channel length down to nanometer scale. We are using it to simulate the performance and reliability of devices based on various 2D materials such as transition metal dichalcogenides (TMDs) and graphene.

We are also using Comphy (hyperlink: https://comphy.eu), a compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices. This simulator can be used together with Minimos-NT.