News

23-26 June 2024: Prof. Yury Illarionov attends 82nd Device Research Conference (DRC) in the University of Maryland, USA

As a member of Young Professional Forum (YPF) he serves as a session chair, participates in evaluation of best student talks and posters. He also organizes the Rump Session "Device research as a chess blitz: publish faster or get more results?" with editors of Nature Nanotechnology (Dr. Lu Shi) and Nature Electronics (Dr. Matthew Parker), as well as Prof. Deji Akinwande (University of Texas at Austin) and Prof. Haozhe Wang (Duke University) serving as panelists. In 2025 Prof. Yury Illarionov will join the Technical Program Committee (TPC) of DRC.

4 June 2024: The paper by Dr. Muhammad Zubair Nawaz is published in ACS Applied Electronic Materials

In this paper entitled "Broadband flexible photodetectors based on CdSxSe1–x/PbI2 heterojunctions ", Dr. Muhammad Zubair Nawaz and his colleagues from Donghua University (China), Shenzhen Institutes of Advanced Technology (China), Qinghai Institutes of Salt Lakes (China), Balochistan University of Information Technology (Pakistan), The Islamia University of Bahawalpur (Pakistan) and University of Exeter (UK) demonstrate that ternary/binary vertically stacked heterojunction photodetectors composed of 1D CdSxSe1–x nanoribbons and 2D PbI2 nanosheets exhibit excellent performance and can be attractive for flexible applications.  

19 March 2024: The paper by Prof. Yury Illarionov is published in npj 2D Materials and Applications

In the paper entitled “Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators” Prof. Yury Illarionov and his colleagues from Ioffe Institute (Russia), AMO GmbH (Germany) and TU Wien (Austria) demonstrate that 2nm thick epitaxial CaF2 is a promising insulator for highly-stable graphene FETs.

2 February 2024: The paper by Prof. Yury Illarionov is published in npj 2D Materials and Applications

In the paper entitled “Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors“, Prof. Yury Illarionov and his colleagues from TU Wien (Austria) and imec (Belgium) report the first detailed reliability study of 300mm FAB MoS2 and demonstrate that the quality of nanoscale top gates requires considerable improvement to enable stable device operation.