19 March 2024: The paper by Prof. Yury Illarionov is published in npj 2D Materials and Applications

In the paper entitled "Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators" Prof. Yury Illarionov and his colleagues from Ioffe Institute (Russia), AMO GmbH (Germany) and TU Wien (Austria) demonstrate that 2nm thick epitaxial CaF2 is a promising insulator for highly-stable graphene FETs.