2 February 2024: The paper by Prof. Yury Illarionov is published in npj 2D Materials and Applications

In the paper entitled "Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors", Prof. Yury Illarionov and his colleagues from TU Wien (Austria) and imec (Belgium) report the first detailed reliability study of 300mm FAB MoS2 and demonstrate that the quality of nanoscale top gates requires considerable improvement to enable stable device operation.