YaJing Chai

Postdoctoral Researchers

Bio

YaJing Chai, received the B. S. degree in Mathematics and Physics from Inner Mongolia University, Hohhot, China, in 2014 and M. S.-D. S. degree in Physics from Inner Mongolia University, Hohhot, China, in 2021. She is currently working as a post doc in two-dimensional material with the Department of Material and Engineering, Southern University of Science and Technology, Shenzhen, China. Her research interests include: 1. Modeling and theoretical analyzing of graphene field-effect transistors using physics-based compact models. 2. Top-down versus bottom-up Comphy simulations of graphene-based electronics. 3. A physical model for the hysteresis in FETs based on graphene and other 2D materials.

Education Background

2010.09-2014.07, Inner Mongolia University, Mathematics and Physics, B.S.

2014.09-2021.12, Inner Mongolia University, Physics, D.S.

Working Experience

2022.04-2023.07, Xiamen institute of technology, teacher

2023.10-now, Southern university of science and technology

Contact

chaiyj@sustech.edu.cn

Additional Info

Mail Code:

ORCID: 

Links

Publications

Electron mobility modulated by optical phonons in AlxGa1-xN/InyGa1-yN/GaN/AlN heterostructures[J]
Superlattices Microstruct
2021, 151: 106821(1-14)
Abstract
Effect of optical phonons scattering on electron mobility in asymmetric AlGaN/GaN quantum wells[J]
Superlattices Microstruct
2020, 139: 106398(1-12)
Abstract
Acoustic phonon modes in asymmetric AlxGa1-xN/GaN/ AlyGa1-yN quantum wells[J]
Superlattices Microstruct
102: 2017, 64-73
Abstract