Yury Illarionov

PI

Prof. Yury Illarionov was born in Leningrad (now St-Petersburg) in 1988. He studied solid state physics in Peter the Great St-Petersburg Polytechnic University (Russia) where he received the B.Sc. and M.Sc. degrees in 2009 and 2011, respectively. From 2010 to 2012 he studied advanced material science in Grenoble INP (France) and University of Augsburg (Germany) in frameworks of Functionalized Advanced Materials and Engineering (FAME) Erasmus Mundus program and in September 2012 received a double European M.Sc. degree. In January 2015 he received the PhD degree in semiconductor physics from Ioffe Institute (Russia) and in December 2015 his second PhD degree degree from TU Wien (Austria). In 2016-2022 he had been working as a postdoc researcher in the Institute for Microelectronics of TU Wien (Austria) which has been known as a strong TCAD modeling center but due to Yury’s work also became world-recognized for pioneering research on 2D electronics. Prof. Yury Illarionov has already coauthored more than 80 contributions including papers in top journals like Nature Electronics, Nature Communications, Advanced Materials, ACS Nano among others (>25 as the first or corresponding author). In 2020 he has got IEEE Senior Member title and also served as an official Russian delegate for BRICS Young Scientist Forum. He also has a very broad international collaboration network which includes top scientists from Russia, China, USA, Germany and other countries.

Prof. Yury Illarionov joined SUSTech as a faculty member in April 2023.

Google scholar:

https://scholar.google.ca/citations?user=1OgaLoQAAAAJ&hl=en

Contact

illarionov@sustech.edu.cn

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Links

Publications

“Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning”
Nature Electronics
5(6), 356-366 (2022)
Abstract
Inorganic Molecular Crystals for 2D Electronics”
Nature Electronics
4, 870-871 (2021)
Abstract
Crystalline Insulators for Scalable 2D Nanoelectronics”
Solid-State Electronics
108043, 185 (2021)
Abstract
“The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials”
Nature Electronics
4 (2), 98-108 (2021)
Abstract
“Native High-k Oxides for 2D Transistors”
Nature Electronics
3(8), 442 (2020)
Abstract
“Insulators for 2D Nanoelectronics: the Gap to Bridge”
Nature Communications
11, 3385 (2020)
Abstract
[Featured by Editors, Top 50 Physics articles in 2020]
“Reliability of Scalable MoS2 FETs with 2nm Crystalline CaF2 Insulators”
2D Materials
v.6, p. 045004 (2019)
Abstract
“Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors”
Nature Electronics
v. 2, pp. 230-235 (2019)
Abstract
“Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors”
2D Materials
v.4, No. 2, 025108 (2017)
Abstract
Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps”
npj 2D Materials and Applications
v.1, 23 (2017)
Abstract
Improved Hysteresis and Reliability of MoS2 Transistors with High-Quality CVD Growth and Al2O3 Encapsulation”
IEEE Electron Device Letters
v. 38, No. 12, pp. 1763-1766 (2017)
Abstract
Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors”
ACS Nano
v. 10, No. 10, pp. 9543–9549 (2016)
Abstract